2sk41911ls no. a1206-1/5 features low on-resistance, low input capacitance, ultrahigh-speed switching. adoption of high reliability hvp process. attachment workability is good by mica-less package. avalanche resistance guarantee. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit drain-to-source voltage v dss 400 v gate-to-source voltage v gss 30 v drain current (dc) i dc *1 limited only by maximum temperature tch=150 c5a i dpack *2 tc=25 c (sanyo s ideal heat dissipation condition)*3 4.8 a drain current (pulse) i dp pw 10 s, duty cycle 1% 16.5 a allowable power dissipation p d 2.0 w tc=25 c (sanyo s ideal heat dissipation condition)*3 28 w channel temperature tch 150 c storage temperature tstg --55 to +150 c avalanche energy (single pulse) *4 e as 82.4 mj avalanche current *5 i av 5a * 1 shows chip capability * 2 package limited * 3 sanyo s condition is radiation from backside. the method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. * 4 v dd =99v, l=5mh, i av =5a * 5 l 5mh, single pulse marking : k4191 tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : ena1206 specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 52808qb ti im tc-00001362 sanyo semiconductors data sheet 2SK4191LS n-channel silicon mosfet general-purpose switching device applications
2SK4191LS no. a1206-2/5 electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit drain-to-source breakdown voltage v (br)dss i d =10ma, v gs =0v 400 v zero-gate voltage drain current i dss v ds =320v, v gs =0v 100 a gate-to-source leakage current i gss v gs = 30v, v ds =0v 100 na cutoff voltage v gs (off) v ds =10v, i d =1ma 3 5 v forward transfer admittance ? yfs ? v ds =10v, i d =2.5a 1.1 2.2 s static drain-to-source on-state resistance r ds (on) i d =2.5a, v gs =10v 1.2 1.56 input capacitance ciss v ds =30v, f=1mhz 225 pf output capacitance coss v ds =30v, f=1mhz 55 pf reverse transfer capacitance crss v ds =30v, f=1mhz 12 pf turn-on delay time t d (on) see specified test circuit. 12 ns rise time t r see specified test circuit. 26 ns turn-off delay time t d (off) see specified test circuit. 28 ns fall time t f see specified test circuit. 14 ns total gate charge qg v ds =200v, v gs =10v, i d =5a 10.7 nc gate-to-source charge qgs v ds =200v, v gs =10v, i d =5a 2.7 nc gate-to-drain ?iller?charge qgd v ds =200v, v gs =10v, i d =5a 6.2 nc diode forward voltage v sd i s =5a, v gs =0v 0.9 1.2 v package dimensions unit : mm (typ) 7509-002 switching time test circuit avalanche resistance test circuit 16.0 14.0 3.6 3.5 7.2 16.1 0.7 2.55 2.55 2.4 1.2 0.9 0.75 0.6 1.2 4.5 2.8 123 10.0 3.2 1 : gate 2 : drain 3 : source sanyo : to-220fi(ls) pw=10 s d.c. 0.5% p. g r gs =50 g s d i d =2.5a r l =80 v dd =200v v out 2SK4191LS v gs =10v 50 50 rg v dd l 10v 0v 2SK4191LS
2sk41911ls no. a1206-3/5 gate-to-source voltage, v gs -- v drain current, i d -- a static drain-to-source on-state resistance, r ds (on) -- static drain-to-source on-state resistance, r ds (on) -- case temperature, tc -- c drain current, i d -- a forward transfer admittance, ? y fs ? -- s diode forward voltage, v sd -- v source current, i s -- a gate-to-source voltage, v gs -- v i d -- v gs r ds (on) -- v gs r ds (on) -- tc i s -- v sd ? y fs ? -- i d drain current, i d -- a switching time, sw time -- ns sw time -- i d drain-to-source voltage, v ds -- v ciss, coss, crss -- pf ciss, coss, crss -- v ds it13665 it13666 it13667 --50 --25 0 25 50 75 100 125 150 0 14 12 10 8 6 4 2 020 18 16 412 210 68 14 0 4.0 1.0 0.5 2.5 1.5 3.5 3.0 2.0 v ds =20v it13669 0.2 0.4 0.6 0.8 1.4 1.2 1.0 0.01 0.1 10 7 5 3 2 3 2 7 5 3 2 2 1.0 7 5 3 it13668 25 c --25 c tc=75 c 0.1 23 57 1.0 10 23 57 1.0 0.1 2 5 7 3 2 3 5 7 v ds =20 v tc= -- 25 c 75 c v gs =0v tc= --25 c 25 c 75 c 5 0 4.0 3.5 3.0 15 13 9 71114 610 812 2.0 1.0 0.5 2.5 1.5 i d =2.5a tc=75 c 25 c --25 c v gs = 10 v, i d =2.5a it13670 10 100 3 2 2 5 7 7 3 5 0.1 1.0 23 57 2 10 357 v dd =200v v gs =10v t d (off) t r t f t d (on) 0 5 7 100 10 1000 3 2 5 7 7 5 3 2 50 10 30 40 20 it13671 f=1mhz ciss coss crss 25 c drain-to-source voltage, v ds -- v drain current, i d -- a i d -- v ds it13689 0 0 10 12 14 8 6 4 10 30 525 15 20 2 15v 10v tc=25 c v gs =5v 6v 8v
2SK4191LS no. a1206-4/5 it13675 0 0 25 50 75 100 125 150 100 80 60 20 40 120 175 e as -- ta avalanche energy derating factor -- % it10478 ambient temperature, ta -- c it13674 it13673 drain-to-source voltage, v ds -- v 0.01 0.1 2 3 5 7 2 1.0 3 5 7 2 a s o drain current, i d -- a 0.1 1.0 10 100 23 57 23 57 7 23 5 23 57 10 3 5 7 5 2 3 i dp =16.5a operation in this area is limited by r ds (on). dc operation 100ms 10ms 1ms 100 s 10 s pw < 10 s i dc (*1)=5a i dpack (*2)=4.8a tc=25 c single pulse * 1. shows chip capability * 2. sanyo? ideal heat dissipation condition 0 0 20 40 60 80 100 120 2.5 140 160 p d -- ta allowable power dissipation, p d -- w 2.0 1.5 1.0 0.5 ambient temperature, ta -- c allowable power dissipation, p d -- w 0 0 20 40 60 80 100 140 120 5 10 25 20 15 30 28 160 p d -- tc case temperature, tc -- c total gate charge, qg -- nc gate-to-source voltage, v gs -- v v gs -- qg it13672 0 0 1 2 3 4 5 6 7 8 12 10 9 610 4 28 v ds =200v i d =5a
2sk41911ls no. a1206-5/5 ps sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party? intellectual property rights which has resulted from the use of the technical information and products mentioned above. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. note on usage : since the 2SK4191LS is a mosfet product, please avoid using this device in the vicinity of highly charged objects. this catalog provides information as of may, 2008. specifications and information herein are subject to change without notice.
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